View MJE2955T_4853949.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors
These devices are designed for use in general-purpose amplifier and switching applications.
Features http://onsemi.com
* DC Current Gain Specified to 10 A * High Current Gain - Bandwidth Product - *
fT = 2.0 MHz (Min) @ IC = 500 mAdc Pb-Free Packages are Available*
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD (Note 1) TJ, Tstg Value 60 70 5.0 10 6.0 75 0.6 -55 to +150 Unit Vdc Vdc Vdc Adc Adc W W/C C 1 2 3
TO-220AB CASE 221A-09 STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Symbol qJC Max 1.67 Unit C/W MJExx55TG AY WW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
MJExx55T = Device Code xx = 29 or 30 G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2010
January, 2010 - Rev. 9
1
Publication Order Number: MJE2955T/D
MJE2955T (PNP) MJE3055T (NPN)
IC, COLLECTOR CURRENT (AMP)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Vdc Collector-Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) VCEO(sus) ICEO ICEX 60 - - - - - - - 700 1.0 5.0 1.0 10 5.0 mAdc Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc ICBO mAdc IEBO mAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 4.0 Adc, VCE = 4 0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - 20 5.0 - - - 100 - 1.1 8.0 1.8 Collector-Emitter Saturation Voltage (Note 2) (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc) Base-Emitter On Voltage (Note 2) (IC = 4.0 Adc, VCE = 4.0 Vdc) VCE(sat) Vdc VBE(on) Vdc DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) fT 2.0 - MHz 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 20%. 10 7.0 5.0 dc 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 5.0 ms 1.0 ms 100 ms TJ = 150C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25C (D = 0.1) 20 30 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 60
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 150C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. (See AN415A)
Figure 1. Active-Region Safe Operating Area
http://onsemi.com
2
MJE2955T (PNP) MJE3055T (NPN)
500 PD, POWER DISSIPATION (WATTS) 300 200 hFE, DC CURRENT GAIN 100 25C 50 - 55C 30 20 10 5.0 0.01 VCE = 2.0 V TJ = 150C 90 80 70 60 50 40 30 20 10 0 0 25 125 50 75 100 TC, CASE TEMPERATURE (C) 150 175 MJE3055T MJE2955T
0.02
0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP)
5.0
10
Figure 2. DC Current Gain MJE2955T
2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 0 0.1 1.4 1.2 TJ = 25C
Figure 3. Power Derating MJE3055T
1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 3.0 V 0.4
VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V
0.8
VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 10
Figure 4. "On" Voltages
ORDERING INFORMATION
Device MJE2955T MJE2955TG MJE3055T MJE3055TG Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) Shipping
50 Units / Rail
http://onsemi.com
3
MJE2955T (PNP) MJE3055T (NPN)
PACKAGE DIMENSIONS
TO-220 CASE 221A-09 ISSUE AF
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
-T- B
4
SEATING PLANE
F
T
C S
Q
123
A U K
H Z L V G D N
R J
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
http://onsemi.com
4
MJE2955T/D

▲Up To Search▲

Price & Availability of MJE2955T

	To Download MJE2955T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .